250 nm process

The 250 nm process refers to a level of MOSFET (CMOS) semiconductor process technology that was commercialized by semiconductor manufacturers around the 1996–1998 timeframe.

A 250 nm CMOS process was demonstrated by a Japanese NEC research team led by Naoki Kasai in 1987.^[1] In 1988, an IBM research team led by Iranian engineer Bijan Davari fabricated a 250 nm dual-gate MOSFET using a CMOS process.^[2]

Products featuring 250 nm manufacturing process[]

Hitachi introduced a 16 MB SRAM memory chip manufactured with this process in 1993.^[3]
Hitachi and NEC introduced 256 MB DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.^[3]
NEC introduced a 1 GB DRAM memory chip manufactured with this process in 1995.^[3]
Hitachi introduced a 128 MB NAND flash memory chip manufactured with this process in 1996.^[3]
The mobile Pentium MMX Tillamook, released in August 1997.
The AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
The AMD K6-III "Sharptooth" used 250 nm.
The Intel Pentium II Deschutes, released in 1998.
The Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998.
The Intel Pentium III Katmai, released in 1999.
The DEC Alpha 21264A, which was made commercially available in 1999.
The initial version of the Emotion Engine processor used in the PlayStation 2 console.

Preceded by 350 nm	CMOS manufacturing processes	Succeeded by 180 nm

References[]

↑ Kasai, Naoki; Endo, Nobuhiro; Kitajima, Hiroshi (December 1987). "0.25 μm CMOS technology using P+polysilicon gate PMOSFET". 1987 International Electron Devices Meeting: 367–370. doi:10.1109/IEDM.1987.191433.
↑ Davari, Bijan; et al. (1988). "A high-performance 0.25 micrometer CMOS technology". International Electron Devices Meeting.
↑ ^3.0 ^3.1 ^3.2 ^3.3 "Memory". STOL (Semiconductor Technology Online). Archived from the original on 2007-10-11. Retrieved 25 June 2019.

[1] Kasai, Naoki; Endo, Nobuhiro; Kitajima, Hiroshi (December 1987). "0.25 μm CMOS technology using P+polysilicon gate PMOSFET". 1987 International Electron Devices Meeting: 367–370. doi:10.1109/IEDM.1987.191433.

[Davari1988-2] Davari, Bijan; et al. (1988). "A high-performance 0.25 micrometer CMOS technology". International Electron Devices Meeting.

[stol-3] 3.0 ^3.1 ^3.2 ^3.3 "Memory". STOL (Semiconductor Technology Online). Archived from the original on 2007-10-11. Retrieved 25 June 2019.

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Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977 1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
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