6 μm process

Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977  1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Industry Moore's law MOS integrated circuit MOS transistor Multi-gate MOSFET Transistor count Semiconductor Semiconductor device Nanoelectronics

The 6 μm process is the level of MOSFET semiconductor process technology that was reached around 1974, by leading semiconductor companies such as Toshiba and Intel.

Products featuring 6 μm manufacturing process

• Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973. It was manufactured on a 6 μm process, and went into mass production in 1975.
• Intel 8080 CPU launched in 1974 was manufactured using this process.
• Zilog Z80 launched 1976 was manufactured in 5 μm and 4 μm.
• The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977. It was designed for a 6 μm process.
• The optical mouse demonstrated by Richard F. Lyon of Xerox in 1981 had a 5 μm NMOS chip.
• MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982. It was designed for a 7 μm and 6 μm process.
• MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982. It was designed for a 5 μm process.

External links

• Brief timeline of microprocessor development

Preceded by 10 μm process

MOSFET semiconductor device fabrication process

Succeeded by 3 μm process