| Hisham Z. Massoud | |
|---|---|
 | |
| Born |
July 31, 1949 Egypt[1] |
| Nationality |
Egyptian American |
| Education |
Cairo University (BSc, MSc) Stanford University (MSc, PhD)[1] |
| Known for |
Massoud model Thermal oxidation Semiconductor device fabrication Surface passivation |
| Engineering career | |
| Discipline |
Electrical engineering Electronic engineering Computer engineering[1] |
| Institutions |
Stanford University Duke University[1] |
Hisham Z. Massoud (born July 31, 1949) is an Egyptian-American engineer. His main research interest is ultrathin gate dielectrics for CMOS ULSI, which includes the technology, physics, modeling, simulation and characterization of ultrathin-oxide MOSFETs.[1] He best known for introducing the Massoud model, used for thermal oxidation in semiconductor device fabrication, nanoelectronics and nanotechnology.
Early life and career[]
Born in Egypt on July 21, 1949, he studied at Cairo University, where he completed his BSc in 1973 and then MSc in 1975. He then moved to the United States. He studied at Stanford University, where he completed his MSc in 1976 and then PhD in 1983. He then became Professor of Electrical and Computer Engineering at Duke University.[1]
Massoud model[]
- See also: Thermal oxidation, Deal–Grove model, and Surface passivation
The Deal–Grove model was published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor,[2] building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s.[3]
In the 1980s, it became necessary to update the Deal-Grove model in order to model thin oxides. An approach that more accurately models thin oxides is the Massoud model, introduced by Hisham Z. Massoud in 1985. The Massoud model is analytical and based on parallel oxidation mechanisms. It changes the parameters of the Deal-Grove model to better model the initial oxide growth with the addition of rate-enhancement terms.[4] The Massoud model is the most suitable for thin oxide films.[5] It has since become the most widely used thermal oxidation model nanoelectronics and nanotechnology.[6]
Awards and honors[]
He has received the following awards and honors.[1]
- Life Fellow – Institute for Electrical and Electronics Engineers – 2015
- Fellow – Electrochemical Society – 2006
- Electronics and Photonics Division Award – Electrochemical Society – 2006
- Inventor Recognition Award – Semiconductor Research Corporation – 2005
References[]
- ↑ 1.0 1.1 1.2 1.3 1.4 1.5 1.6 "Hisham Massoud". Duke Electrical & Computer Engineering. Duke University. Retrieved 24 August 2024.
- ↑ Deal, B. E.; A. S. Grove (December 1965). "General Relationship for the Thermal Oxidation of Silicon". Journal of Applied Physics. 36 (12): 3770–3778. Bibcode:1965JAP....36.3770D. doi:10.1063/1.1713945.
- ↑ Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922.
Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.
- ↑ Massoud, Hisham Z.; J.D. Plummer (1985). "Thermal oxidation of silicon in dry oxygen: Accurate determination of the kinetic rate constants". Journal of the Electrochemical Society. 132 (11): 2693–2700. doi:10.1149/1.2113649.
- ↑ "2.7 The Massoud Model". www.iue.tuwien.ac.at. Retrieved 2024-08-23.
- ↑ Sun, Yan; Wu, Yanhua; Liu, Kexue; Zhou, Wenfei (March 2019). "Brief Introduction of Thermal Oxidation Technology". 2019 China Semiconductor Technology International Conference (CSTIC). IEEE: 1–3. doi:10.1109/CSTIC.2019.8755700. ISBN 978-1-5386-7443-7.