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The Massoud model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to predict and interpret thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1985 by Hisham Z. Massoud as an update to the Deal–Grove model.

The Massoud model is analytical and based on parallel oxidation mechanisms. It changes the parameters of the Deal-Grove model to better model the initial oxide growth with the addition of rate-enhancement terms. The Massoud model is the most suitable for ultra-thin oxide films. It is universally implemented in process-modeling software tools,[1] and is the most widely used thermal oxidation model in nanoelectronics and nanotechnology.

History[]

See also: Hisham Z. Massoud, Deal–Grove model, and Thermal oxidation

The Deal–Grove model was published in 1965 by Bruce Deal and Andrew Grove of Fairchild Semiconductor,[2] building on Mohamed M. Atalla's work on silicon surface passivation by thermal oxidation at Bell Labs in the late 1950s.[3]

In the 1980s, it became necessary to update the Deal-Grove model in order to model ultra-thin oxides. An approach that more accurately models ultra-thin oxides is the Massoud model, introduced by Hisham Z. Massoud in 1985. The Massoud model is analytical and based on parallel oxidation mechanisms. It changes the parameters of the Deal-Grove model to better model the initial oxide growth with the addition of rate-enhancement terms.[4] The Massoud model is the most suitable for ultra-thin oxide films.[5] It has since become the most widely used thermal oxidation model in nanoelectronics and nanotechnology.[6]

References[]

  1. Wiwanitkit, Viroj (January 2007). "Oxidation Flux Change on Glomerulus Membrane in Normal and Diabetic Nephropathy". Renal Failure. 29 (5): 549–551. doi:10.1080/08860220701395036. ISSN 0886-022X.
  2. Deal, B. E.; A. S. Grove (December 1965). "General Relationship for the Thermal Oxidation of Silicon". Journal of Applied Physics. 36 (12): 3770–3778. Bibcode:1965JAP....36.3770D. doi:10.1063/1.1713945.
  3. Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.
  4. Massoud, Hisham Z.; J.D. Plummer (1985). "Thermal oxidation of silicon in dry oxygen: Accurate determination of the kinetic rate constants". Journal of the Electrochemical Society. 132 (11): 2693–2700. doi:10.1149/1.2113649.
  5. "2.7 The Massoud Model". www.iue.tuwien.ac.at. Retrieved 2024-08-23.
  6. Sun, Yan; Wu, Yanhua; Liu, Kexue; Zhou, Wenfei (March 2019). "Brief Introduction of Thermal Oxidation Technology". 2019 China Semiconductor Technology International Conference (CSTIC). IEEE: 1–3. doi:10.1109/CSTIC.2019.8755700. ISBN 978-1-5386-7443-7.

Bibliography[]

  • Massoud, H. Z.; J.D. Plummer (1985). "Thermal oxidation of silicon in dry oxygen: Accurate determination of the kinetic rate constants". Journal of the Electrochemical Society. 132 (11): 2693–2700. doi:10.1149/1.2113649.
  • Jaeger, Richard C. (2002). "Thermal Oxidation of Silicon". Introduction to Microelectronic Fabrication (2nd ed.). Upper Saddle River: Prentice Hall. ISBN 0-201-44494-1.
  • Deal, B. E.; A. S. Grove (December 1965). "General Relationship for the Thermal Oxidation of Silicon". Journal of Applied Physics. 36 (12): 3770–3778. Bibcode:1965JAP....36.3770D. doi:10.1063/1.1713945.

External links[]

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